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Ge etalon
Ge etalon for QCL
(Quantum Cascade Laser)
for 9.6 mkm
Specification:
Ge etalon has a hard requirement for parallelism : <
2 sec.
dia
38.1
(-0.1) mm
thickness: 20 (+/-0.1) mm
Flatness: 1 fringe ( Lambda/2 at 633 nm) , delta N = 0.2
fringes
Surface quality: 60-40 s/d
Parallelism: 2 sec
Perpendicularity: 5 min
Quantum Cascade Laser
The quantum cascade laser is based on a fundamentally different principle to
normal semiconductor lasers. It was invented and first demonstrated in 1994. It
uses only one type of charge carrier, electrons, and is therefore called a
unipolar laser.
In essence the quantum cascade laser operates like an electronic waterfall.
Electrons cascade down a series of identical energy steps built into the
material during crystal growth, emitting a photon at each step. This is unlike
diode lasers which emit only one photon over the similar cycle. In practice this
means that quantum cascade lasers can outperform diode lasers operating at the
same wavelength by factors greater than 1000 in terms of power due to the
cascading effect and the ability to carry large currents. The other
revolutionary aspect of the quantum cascade laser is that it can be designed to
emit at any wavelength over an extremely wide range using the same combination
of materials in the active region.
References:
The original works on the theoretical prediction of quantum cascade lasers were published by R. F. Kazarinov and R. A. Suris in 1971-1973.
Possibility of the amplification of electromagnetic waves
in a semiconductor with a superlattice
R. F. Kazarinov and R. A. Suris
Sov. Phys. Semicond. v.5, #4, pp.707-709 (1971) [Fiz. Tech. Poluprovodn. v.5,
#4, pp.797-800 (1971)]
Theory of electrical properties of semiconductors with
superlattices,
R. F. Kazarinov and R. A. Suris
Sov. Phys. Semicond. v.7, #3, pp.347-352 (1973) [Fiz. Tech. Poluprovodn. v.7,
pp.488-498 (1973)]
Electric and electromagnetic properties of semiconductors
with a superlattice
R. F. Kazarinov and R. A. Suris
Sov. Phys. Semicond. v.6, #1, pp.120-131 (1972) [Fiz. Tech. Poluprovodn. v.6,
#1, pp.148-162 (1972)]
R F Kazarinov and R A
Suris 1971 Amplification of
electromagnetic waves in a semiconductor superlattice
Sov. Phys. Semicond. 5 707709
J Faist et al. 1994
Quantum cascade laser
Science 264 553555
F Capasso and A Y Cho 1994 Band-gap engineering of semiconductor
heterostructures by molecular beam epitaxy
Surface Sci. 299/300 878891
F Capasso et al. 1997 Infrared (411 µm) quantum cascade lasers
Solid State Comm. 102 231236
E Corcoran and G Zorpette 1997 Diminishing dimensions
The Solid-State Century (Special issue of Scientific American) pp2533
G Scamarcio et al. 1997 High-power infrared (8 µm) superlattice lasers
Science 276 773776
C Gmachl et al. 1998 Continuous wave and high power pulsed operation of
index-coupled distributed-feedback quantum cascade lasers at
l~ 8.5 µm
Appl. Phys. Lett. 72 14301433
K Namjou et al. 1998 Sensitive absorption spectroscopy with a room temperature
distributed-feedback quantum cascade laser
Opt. Lett. 23 219221
M Rochat et al. 1998 Far-infrared (l = 88 µm) electroluminescence in a quantum
cascade structure
Appl. Phys. Lett. 73 37243726
L J Olafsen et al. 1998 Near-room-temperature mid-infrared interband cascade
laser
Appl. Phys. Lett. 72 23702372
S W Sharpe et al. 1998 High-resolution (Doppler limited) spectroscopy using
quantum-cascade distributed-feedback lasers
Opt. Lett. 23 13961398
C Sirtori et al. 1998 GaAs/AlxGa1xAs quantum cascade lasers
Appl. Phys. Lett. 73 34863488
A Tredicucci et al. 1998 A multiwavelength semiconductor laser
Nature 396 350353
B A Paldus et al. 1999
Photoacoustic spectroscopy using quantum-cascade lasers
Opt. Lett. 24 178180
S Slivken et al. 1999 High-temperature continuous-wave operation of
l~ 8 µm
quantum cascade lasers
Appl. Phys. Lett. 74 173175
O Gauthier-Lafaye et al. 1999 High-power GaAs/AlGaAs quantum fountain unipolar
laser emitting at 14.5 µm with 2.5% tunability
Appl. Phys. Lett. 74 15371539
The full story of the Cascade Laser from the Bell Labs
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